Эффэкт транзистор (mosfet) | 2,000+ бүтээгдэхүүн

Micro-source LP4056HSPF LP4056H SOP-8 package 1A current 4.2V lithium battery charging IC chip

Core controlled source AGM20P30AP1 PDFN3.3 * 3.3

New original FDD6637 patch TO-252 MOS FET P-channel 55A 35V in stock

Core controlled source AGM20P07EL SOT23-3

Hxd140P40 To-252 -140A -40V P-Channel Mos Tube Field Effect Tube Original Factory Direct

Xinjieneng NCE60P50K TO-252 -60V/-50A P channel MOS FET original genuine goods

Original Cmf50P06 Replaces Fqpf47P06/To-220F -60V -50A P-Channel Mos Tube Direct

BSS308PE H6327 SOT23 silk screen YFs new original in stock with single service

Yongyuan micro-agent AP30P06DF PDFN3 * 3-8L 60V 30A low power consumption low resistance p-channel MOS tube

Yongyuan micro-agent AP20P04DF PDFN3 * 3-8L 40V 20A low power consumption low resistance p-channel MOS tube

Yongyuan micro-agent AP150P03NF PDFN3 * 3-8L 30V 150A low power P-channel MOS tube

Hxn16Np04 Pdfn5 * 6-8L 16/-16A 40/-40V N + P Channel Mos Tube Field Effect Tube

Yongyuan micro-agent AP50P03DF PDFN3 * 3-8L 30V 50A low power consumption low resistance p-channel MOS tube

Jmtk350P04A Jjw/Jiejiewei To-252 Mos Field Effect Tube P Channel 15A/40V

Jmtk160P03A Jjw/Jiejiewei To-252 Mos Field Effect Tube P Channel 45A/30V

Hxn7611 Pdfn3*3 10/-7A 30/-30V N+P Channel Mos Tube Field Effect Tube Original Direct Sales

Yongyuan micro-agent AP100P02NF PDFN3 * 3-8L 20V 100A low power P-channel MOS tube

Core controlled source AGM20P30AP PDFN3.3 * 3.3

Yongyuan Micro Agent Ap100P04D Pdfn3*3-8L 40V100A Low Power Low Resistance P Channel Mos Tube

Yongyuan micro-agent AP8P06MSI SOT223-3L 60V 8A low power consumption low resistance P-channel MOS tube

Taiwan Nce30H14K To-252 Mos Fet 140A 30V Nce30H14

Yongyuan micro-agent AP8P02MSI SOT223-3L 20V 8A low power consumption low resistance P-channel MOS tube

Yongyuan micro-agent AP6P05MSI SOT223-3L 50V 6A low power low resistance P-channel MOS tube

Hx4435 Sop-8 -7A -30V P-Channel Mos Tube Field Effect Tube Original Supply

NCE40P13S SOP-8 P-channel original NCE new energy MOS field effect transistor

Hxn2401 Dfn2 * 2-Ep2 -12A -18V P-Channel Mos Tube Field Effect Tube Original Factory Direct Sales

STD10P6F6 TO-252 MOSFET P CH 60V 10A SMD FET 160mΩ

Core-controlled source AGM15P16AS DFN2 * 2

Yongyuan micro-agent AP15P03DF PDFN3 * 3-8L 30V 15A low power consumption low resistance p-channel MOS tube

Core controlled source AGM3415EL SOT23

Core-controlled source AGM20P16AS DFN2 * 2

Hxd100P03 To-252 -100A -30V P-Channel Mos Tube Field Effect Tube Original Direct Sales

Hx3407L Sot-23-3L -4.1A -30V P-Channel Mos Tube Field Effect Tube Original Factory Direct Sales

30P03 To252 -30A30V 13mω Goodwork P-Channel Field-Effect Transistor Mos

Hx3407By Sot-23 -4.5A -30V P-Channel Mos Tube Field Effect Tube Original Direct Sales

Jmtk440P04A Jjw/Jiejiewei To-252 Mos Field Effect Tube P Channel 10A/40V

Yongyuan micro-agent AP3P10MSI SOT223-3L 100V 3A low power low resistance P-channel MOS tube

Yongyuan micro-agent AP15P06S SOT223-3L 60V 15A low power consumption low resistance P-channel MOS tube

Shanghai Belling BLM3401 SOT-23 P Channel -30V/-24A MOS FET Original genuine goods

Yongyuan micro-agent AP3P06MSI SOT223-3L 60V 3A low power low resistance P-channel MOS tube