Хагас дамжуулагч материал | 2,000+ бүтээгдэхүүн

Artificial color sapphire rough stone with less internal bubbles processing and cutting high hardness wear-resistant jewelry

Color Sapphire Original Stone Artificial Gem Royal Blue Papalacha Al203 Less Bubbles Inside

Silicon carbide SIC substrate wafer 10 * 10mm 6 H-P type diameter 10 * 10mm 350 μm test grade

6 inch Sic silicon carbide wafer substrate 6H-P type diameter 150mm thickness 350μm P grade R grade Z grade

2 inch Sic silicon carbide substrate 6H-P type diameter 50.8mm thickness 350μm P grade R grade D grade

Sic silicon carbide substrate 5.0*5.0mm square 6H-P type thickness 350μm product grade test grade

Quartz Connecting Tube, High Temperature Resistant Transparent Quartz Tube, Custom Processing, Ground Quartz Tube

SiC silicon carbide substrate wafer 4 inch 6H-P type thickness 350μm conductivity Z level Mos level

Tec Refrigeration Module Ivd External Diagnostic Reagent Pot Medical Semiconductor Refrigeration Module Accurate Temperature Control

6 inch SiC substrate 4H-P type diameter 150mm thickness 350μm conductivity corrosion resistance

Quartz Punching Sheet Transparent Optical Quartz Glass Sheet Laser Precision Punching High Purity Transparent Quartz Sheet

SiC silicon carbide substrate 5.0 * 5.0mm 4 H-P type diameter 5 * 5mm Prime grade Dummy grade

Semiconductor electronic refrigeration piece TEC1-07105 8.4V dual lithium battery power supply condenser 30*30*3.8mm

Tea Green Synthetic Sapphire Rough Stone for Decorative Jewelry

10.0*10.0mmSic silicon carbide substrate 4H-P type diameter 10*10mm thickness 350μm Mos class

Semiconductor Refrigeration Chip Module for Medical Equipment, Small Size, Compact Temperature Control and Stable Tec Refrigeration Module

Silicon carbide SiC wafer 4 inch 4H-P type diameter 100mm Mos high temperature resistance and high hardness

6 inch SiC substrate SiC single crystal diameter 150mm 3 C- N type can be used in communication radar system

SiC coated SiC silicon carbide ceramic pallet plate ICP etching carrier

Small Diameter Transparent Quartz Digital Tube Quartz Glass Capillary Tube

Bismuth Telluride Bismuth Telluride Particles Bismuth Telluride Refrigeration Metal Bismuth Telluride Crystal Rod Bismuth Telluride Target Material

SiC silicon carbide wafer 5 * 5mm 3 C- N type diameter 5*5mm product grade high mechanical strength

SiC silicon carbide substrate 4 inches 3C-N type conductivity type diameter 100mm Prime grade

Al2O3 6 inch sapphire wafer substrate DSP with groove processing thickness high precision sapphire window

3 inch Si wafer N-type P-type SSP DSP single crystal Prime grade cuttable size shape

Standard Uv-Transparent Quartz Cuvette Optical Transparent Glass Cuvette Cuvette Sample Cell

Double Screw Quartz Glass Tube with Cover, Transparent Quartz Screw Tube, High Temperature Resistant Quartz Tube

2 inch 3 inch 4 inch 6 inch BF33 glass wafer optical window high transparency, high temperature resistance and wear resistance

SiC wafer substrate 10*10mm 3 C- N type thickness 350μm Zero product grade

2 inch 3 inch 4 inch 6 inch BF33 glass wafer DSP optical window high transparency, high temperature resistance and wear resistance

8 inch diameter 200mm sapphire wafer thickness 1.0mm 1sp for Epi-Ready carrier

Sapphire light cone Mohs hardness 9 high wear-resistant transparency used in optical window professional processing

SiC wafer 2 inch 3C-N type thickness 350μm conductive type Prime level

4-6 inch single wafer carrier box adjustable single cassette suitable for a variety of specifications 4 inch 5 inch 6 inch

Precision manufacturing sapphire tube high temperature transparent strength can be applied to the military industrial research

Customized High Temperature Tubular Furnace Quartz Screw Glass Tube Transparent Screw Quartz High Permeability Test Tube

Customized Micro Thick Bottom Cuvette Q264 Transparent Quartz Glass Cuvette Micro Cuvette

Sapphire wafer 2 inch 4 inch 6 inch 8 inch 10 inch 12 inch high temperature resistant corrosion resistance high hardness

6-inch Si monocrystalline silicon wafer thickness 525μm P type N type single throw double throw P grade R grade

8-inch conductive single crystal SiC on polycrystalline SiC composite substrate P-type N-type thickness 750μm